| 摘要 |
PURPOSE: To provide a semiconductor device where a leakage current is small and at the same time the degree of integration is high. CONSTITUTION: Second and third patterns having a second width that is different from a first one are arranged at a fixed distance in the first direction of the first pattern that is arranged in a fixed cycle in the first direction and has the first width. A fourth pattern having the second width is arranged between the second and third patterns at a fixed distance in the first direction of the first pattern.
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