| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to reduce the occupancy area of a chip and to minimize the damage of a semiconductor substrate by carrying out ROM(Read Only Memory) coding using the first contact hole without an additional coding region, and forming the first contact hole before depositing a PMD(Pre-Metal Dielectric) layer. CONSTITUTION: After forming the first contact hole by patterning a gate oxide layer(21) formed on a semiconductor substrate(20), a polysilicon layer is deposited. After forming a gate electrode(23) used as a ROM coding region and the first metal wiring(24) by patterning the polysilicon layer, a source and drain impurity region are formed at both sides of the gate electrode by implanting ions. After depositing a nitride layer on the resultant structure, a nitride spacer is formed at both sidewalls of the gate electrode. A PMD layer(26) is formed on the resultant structure for isolating the gate electrode and the first metal wiring. Then, the second contact hole is formed in the PMD layer by a photolithography process. After forming a resist layer pattern(27), the same ions with the source and drain region are implanted by using the resist layer pattern as a mask, so that a ROM transistor has ON-characteristic.
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