发明名称 |
Integrated chip having SRAM, DRAM and flash memory and method for fabricating the same |
摘要 |
A semiconductor memory system fabricated on one substrate is presented including an SRAM device, a DRAM device and a Flash memory device. In one embodiment the SRAM device is a high-resistive load SRAM device. In another embodiment the DRAM device is a deep trench DRAM device. A method is also presented for fabricating the memory system on one substrate having the SRAM device, the DRAM device and the Flash memory device. |
申请公布号 |
US6556477(B2) |
申请公布日期 |
2003.04.29 |
申请号 |
US20010861788 |
申请日期 |
2001.05.21 |
申请人 |
IBM CORPORATION |
发明人 |
HSU LOUIS L.;RADENS CARL;WANG LI-KONG |
分类号 |
G11C11/00;H01L21/8239;H01L27/105;(IPC1-7):G11C11/34 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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