发明名称 Integrated chip having SRAM, DRAM and flash memory and method for fabricating the same
摘要 A semiconductor memory system fabricated on one substrate is presented including an SRAM device, a DRAM device and a Flash memory device. In one embodiment the SRAM device is a high-resistive load SRAM device. In another embodiment the DRAM device is a deep trench DRAM device. A method is also presented for fabricating the memory system on one substrate having the SRAM device, the DRAM device and the Flash memory device.
申请公布号 US6556477(B2) 申请公布日期 2003.04.29
申请号 US20010861788 申请日期 2001.05.21
申请人 IBM CORPORATION 发明人 HSU LOUIS L.;RADENS CARL;WANG LI-KONG
分类号 G11C11/00;H01L21/8239;H01L27/105;(IPC1-7):G11C11/34 主分类号 G11C11/00
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