| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which is constructed into a fine size with ease, is excellent in geometrical symmetry, and has electric characteristics unlikely to be affected by machining accuracy. SOLUTION: There are provided at least an n type drift region 3, a p type base region 8 disposed on the surface of the drift region 3, an n type emitter region 11 disposed on the surface of the base region 8, an n type collector region 9 disposed on the surface of the drift region 3 separated from the base region 8, a first polysilicon layer 73 disposed upward the base region 8 having an external peripheral configuration corresponding to an internal peripheral side configuration of a flat surface pattern of the emitter region 11, and a second polysilicon layer 74 disposed upward between the emitter region 11 and the collector region 9 having an internal peripheral configuration corresponding to an external peripheral side configuration of the flat surface pattern of the emitter region 11.
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