| 摘要 |
PROBLEM TO BE SOLVED: To eliminate unnecessary photographic steps with respect to the manufacturing of devices using STI. SOLUTION: The shallow trench isolation method includes a step for preparing a substrate 20 including a step for forming mesa structures 22 and 24 on the substrate 20, a step for forming barrier caps 26 on the mesa structures 22 and 24, a step for forming multilayered structures on the mesa structures and the barrier cap 26s in such a way that the layers of the multilayered structures have different polishing speeds, and a step for polishing the multilayered structures to the level of the barrier cap 26.
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