发明名称 Method of deforming a pattern and semiconductor device formed by utilizing deformed pattern
摘要 A method of deforming a pattern comprising the steps of: forming, over a substrate, a layered-structure with an upper surface including at least one selected region and at least a re-flow stopper groove, wherein the re-flow stopper groove extends outside the selected region and separate from the selected region; selectively forming at least one pattern on the selected region; and causing a re-flow of the pattern, wherein a part of an outwardly re-flowed pattern is flowed into the re-flow stopper groove, and then an outward re-flow of the pattern is restricted by the re-flow stopper groove extending outside of the pattern, thereby to form a deformed pattern with at least an outside edge part defined by an outside edge of the re-flow stopper groove.
申请公布号 US2003071236(A1) 申请公布日期 2003.04.17
申请号 US20020300735 申请日期 2002.11.21
申请人 NEC CORPORATION 发明人 KIDO SHUSAKU
分类号 G03F7/40;F16K35/00;G03F1/00;H01L21/027;H01L21/302;H01L21/3065;H01L21/3205;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L29/04;H01L29/417;H01L29/423;H01L29/76;H01L29/786;(IPC1-7):F16K35/00 主分类号 G03F7/40
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