| 摘要 |
A manufacturing method of a semiconductor device of the invention is a method of manufacturing a semiconductor device by forming a plurality of films on an insulating layer which has a surface in which a recess portion is partially formed. The method includes: a base-metal-film forming step of forming a base-metal film including a metal having a high melting point on the surface of the insulating layer including an inside surface of the recess portion, a surface-processing step of processing a surface of the base-metal film by means of an organic solvent having an OH-group, and a metal-for-circuit depositing step of depositing a metal for a circuit on the processed surface of the base-metal film by means of a CVD method in such a manner that at least a part of or the whole of the recess portion is filled up.
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