| 摘要 |
The present invention relates to a process for etching a metal layer system. The metal layer system includes a first aluminum-containing layer, a second aluminum-containing layer, and an interlayer arranged between the two aluminum-containing layers. The interlayer consists of a material that is suitable for end-point detection. The etching process includes a first etching step, in which the upper aluminum-containing layer is etched using a first etching angle, and a second etching step, in which the lower aluminum-containing layer is etched using a second etching angle. The process switches between the first etching step and the second etching step as soon as the end-point detection has detected that the interlayer has been reached. Accordingly, the interlayer is arranged at a location at which it is intended for the process to switch from the first etching step to the second etching step.
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