| 摘要 |
The device comprises a layer of silicon (3) separated from a substrate (1) b y a layer of insulating material (2). A rib (4) having a n upper surface (4A) and two side surfaces (4B, 4C) is formed in the layer of silicon (3) to provide a waveguide for the transmission of optical signals. A lateral doped junction (7, 9, 8) is formed between the si de surfaces (4B, 4C) of the rib (4) such that an electri cal signal can be applied across the junction (7, 9, 8) to control the density of charg e carriers across a substantial part of the cross-sectio nal area of the rib (4) thereby actively altering the effective refractive index of the waveguide.
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