| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a high-density packaging-type semiconductor device. SOLUTION: The method of manufacturing a semiconductor device includes a semiconductor element, an electrode that is arranged around the semiconductor element, a small-gauge wire where the front of the electrode is electrically connected to the electrode of the semiconductor element, and a sealing resin were the semiconductor element, the electrode, and the small-gauge wire are sealed. The manufacturing method also includes a first metal layer that becomes the electrode, the second metal layer that is connected to the first metal layer, and a frame layer that is joined to the first metal layer via the second one. In this case, lamination foils with different etching characteristics are used at least for the second metal and frame layers. |
