| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem that breakdown due to heat occurs since heat that is generated in the actuation of a semiconductor device cannot be dissipated to the outside efficiently. SOLUTION: The package for accommodating a semiconductor device comprises a board 1, a frame-like insulator 2 having a wiring layer 6, and a lid body 3. The frame-like insulator 2 is formed by an oxide sintered body made of 10 to 68 mol% BaO, 9 to 50 mol% SnO2 , and 13 to 72 mol% B2 O3 . At the same time, the board 1 is made of 65 to 95 wt.% silicon carbide and 5 to 35 wt.% copper. |
