发明名称 |
LOW TEMPERATURE SIDEWALL OXIDATION OF W/WN/POLY-GATESTACK |
摘要 |
In a method of making a W/WN/Poly-Gatestack, the improvement of providing low temperature sidewall oxidation to affect less outdiffusion of dopant implants near the surface to allow more margin in small groundrule device design for a support device, comprising: depositing a silicon layer on a substrate; forming a W-containing nitride layer on the deposited silicon; depositing a W layer on the W-containing nitride layer to form a W/WN/silicon stack; and performing a gatesidewall anodic oxidation by affecting a mask open to enable contacting W at its wafer edge and putting the gatestack on the positive potential or anode and the counter electrode on the negative potential.
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申请公布号 |
US2003064576(A1) |
申请公布日期 |
2003.04.03 |
申请号 |
US20010965092 |
申请日期 |
2001.09.28 |
申请人 |
INFINEON TECHNOLOGIES NORTH AMERICA CORP. |
发明人 |
SEITZ MIHEL;RAMACHANDRAN RAVIKUMAR |
分类号 |
H01L21/28;H01L21/316;H01L21/3205;H01L21/321;H01L21/336;H01L21/4763;(IPC1-7):H01L21/320;H01L21/476 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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