| 摘要 |
A method for forming a photo-mask includes forming a light-shielding layer on a substrate, coating a resist film on the light-shielding layer, exposing the resist film with low dosage, and inclining a resist profile after developing the exposed resist film. Accordingly, an opening dimension of the light-shielding layer can be designed without depending on the location of the region with respect to the formed resist pattern of the photo-mask. |
