发明名称 |
Post exposure modification of critical dimensions in mask fabrication |
摘要 |
A system and method are described for modifying an exposure image in a radiation sensitive layer by treating the exposure image with a heterogeneous and non-uniform post exposure thermal treatment. The treatment may comprise providing different portions of the exposure feature, such as different exposure features or critical dimensions, with different thermal fluxes from a thermal modification system, such as a post exposure bake oven or hot plate configured to provide different thermal fluxes. The thermal modification system may comprise one or more adjustable spacers to adjust a radiant energy flux from a thermal energy source to the radiation sensitive layer by adjusting a separation distance between the source and the layer.
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申请公布号 |
US2003059719(A1) |
申请公布日期 |
2003.03.27 |
申请号 |
US20010965280 |
申请日期 |
2001.09.26 |
申请人 |
OHFUJI TAKESHI;INOMATA HIROYUKI;SASAKI SHIHO;KURIHARA MASA-AKI |
发明人 |
OHFUJI TAKESHI;INOMATA HIROYUKI;SASAKI SHIHO;KURIHARA MASA-AKI |
分类号 |
G03F1/08;G03F1/14;G03F7/26;G03F7/38;G03F7/40;H01L21/027;(IPC1-7):G03F9/00;G03C5/00;G03G16/00;G21K5/10;H01J37/08 |
主分类号 |
G03F1/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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