| 发明名称 |
Fin field effect transistor with self-aligned gate |
| 摘要 |
The present invention provides a process for fabricating a metal oxide semiconductor field effect transistor (MOSFET) having a double-gate and a double-channel wherein the gate region is self-aligned to the channel regions and the source/drain diffusion junctions. The present invention also relates to the FIN MOSFFET structure which is formed using method of the present invention.
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| 申请公布号 |
US2003057486(A1) |
申请公布日期 |
2003.03.27 |
| 申请号 |
US20010965288 |
申请日期 |
2001.09.27 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
GAMBINO JEFFREY P.;LASKY JEROME B.;RANKIN JED H. |
| 分类号 |
H01L21/336;H01L29/423;H01L29/786;(IPC1-7):H01L27/01;H01L27/12;H01L31/039 |
主分类号 |
H01L21/336 |
| 代理机构 |
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