Transistor arrangement used in the production of thin layer transistors comprises vertical semiconductor material inserted in microholes of a film composite made from two plastic films with an intermediate metal layer

摘要

Transistor arrangement comprises vertical semiconductor material inserted in microholes (4) of a film composite made from two plastic films (1, 3) with an intermediate metal layer (2). The semiconductor material is provided with contacts (6, 7) by metallizing the upper and lower sides of the film composite. An Independent claim is also included for a process for the production of the transistor arrangement.