| 摘要 |
PROBLEM TO BE SOLVED: To obtain a reliable, highly integrated, and high-performance semiconductor device in a large-sized glass substrate to be mass-produced using a simple manufacturing process. SOLUTION: Phosphor 117 that is an impurity selectively selected from 5-group B is introduced to a partial region (high-concentration impurity region) 108b of a crystalline silicon film 108, which is crystallized by heating and treating an a-Si film 103, where nickel 105 that is a small amount of catalyst element for accelerating crystallization is introduced. Second heat treatment is made to move the nickel 105 contained in a region (an active region) 108a, where the phosphor 117 of the crystalline silicon film 108 if not introduced to the highly-doped region. The second heat treatment is carried out so that the concentration of the nickel 105 contained in the active region 108a and contained in the highly-doped region 108b at least do not reach the segregated state of thermal equilibrium state.
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