| 摘要 |
PROBLEM TO BE SOLVED: To efficiency manufacture an epitaxial ferroelectric thin film element provided with excellent characteristics by solving such problems as film surface roughness in the case of using a vapor epitaxial growth method, restriction of film thickness formed each time in the case of using a sol-gel method, complexity of a process in forming a laminated structure film consisting of layers with different refractive indexes and so on. SOLUTION: On an oxide single crystal substrate with a perovskite structure, an amorphous film is formed by a vapor growth method at a temperature lower than the crystallization temperature, and subsequently a ferroelectric thin film with the perovskite structure is formed by crystallizing the amorphous film under heating at a temperature higher than the crystallization temperature. Also in the amorphous film forming step, an amorphous film composed of two or more layers with compositions different from each other is formed. A series of steps consisting of the amorphous film forming step and the crystallization step are repeated two or more times. |
