| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a ferroelectric nonvolatile semiconductor memory having a structure without lowering reliability even by oxidation heat treatment at a high temperature in the case of forming a ferroelectric layer. SOLUTION: The method for manufacturing the ferroelectric nonvolatile semiconductor memory having a selective transistor and a memory cell comprises a step of forming the selective transistor, a step of forming an insulating layer 16 on the entire surface, a step of forming a patterned first electrode on the layer 16, a step of forming a ferroelectric layer 22 on at least the first electrode 21, a step of forming connectors 18, 18A for electrically connecting one source/drain region 14A to the first electrode 21, and a step of forming a second electrode 23 on the layer 22.
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