| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon carbide semiconductor device that can achieve a high breakdown voltage in a new configuration, and to provide a method for manufacturing a silicon carbide semiconductor device. SOLUTION: An n<-> -type epitaxial layer 2 is formed on the main surface of an n<+> -type SiC substrate 1, and a trench 3 is placed in the epitaxial layer 2 side by side. In the trench 3, a bottom section is wider than a trench opening. A p<+> gate region 4 is formed at the inner wall section of the trench 3. An n<+> source region 6 is formed at a surface layer section in a site between adjacent trenches 3 in the epitaxial layer 2.
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