发明名称 Integrated helix coil inductor on silicon
摘要 A new structure and method is provided for the creation of an inductor on the surface of a silicon semiconductor substrate. The inductor is of a helix coil design having upper level and lower level conductors further having an axis whereby the axis of the helix coil of the inductor is parallel to the plane of the underlying substrate. Under the first embodiment of the invention, the height of the helix coil that is created on the surface of a silicon substrate is uniform. Under the second embodiment of the invention the height of the helix coil of the inductor of the invention is uniform while a ferromagnetic core is inserted between the upper and the lower level conductors of the helix coil. Under the third embodiment of the invention, the height of the helix coil that is created on the surface of a silicon substrate is non-uniform. Under the fourth embodiment of the invention the height of the helix coil of the inductor of the invention is non-uniform while a ferromagnetic core is inserted between the upper and the lower level conductors of the helix coil.
申请公布号 US2003043010(A1) 申请公布日期 2003.03.06
申请号 US20020271006 申请日期 2002.10.15
申请人 CHARTERED SEMICONDUCTOR MANUFACTURING LTD. 发明人 YEO KIAT SENG;TAN HAI PENG;MA JIAN GUO;DO MANH ANH;CHEW KOK WAI JOHNNY
分类号 H01L21/02;H01L27/08;(IPC1-7):H01F5/00 主分类号 H01L21/02
代理机构 代理人
主权项
地址