| 摘要 |
A semiconductor transistor comprising a substrate having an active layer formed thereon, a source and a drain formed in the active layer, a gate insulating layer formed on the active layer and a gate electrode formed on the insulating layer, wherein the active layer has at least one recombination center which is located between the source and the drain and which extends from the substrate side through the active layer for less than the full depth thereof. The transistor can be fabricated by depositing the recombination centers on the substrate prior to depositing the active layer or by other methods such as diffusing material from the substrate side into the active layer.
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