| 摘要 |
A method of forming a dual damascene structure. A first dielectric layer, an etching stop layer, a second dielectric layer and a hard mask layer are sequentially formed over a substrate. Photolithographic and etching operations are conducted to remove a portion of the hard mask layer, the second dielectric layer, the etching stop layer and the first dielectric layer so that a via opening is formed. A conformal dielectric layer is formed on the surface of the hard mask layer and the interior surface of the via opening. An anisotropic etching operation is carried out to form spacers on the sidewalls of the via opening. A patterned photoresist layer is formed over the hard mask layer. Using the patterned photoresist layer as a mask, a portion of the second dielectric layer is removed to form a trench. The patterned photoresist layer is removed. Conductive material is deposited over the substrate to fill the via opening and the trench. Chemical-mechanical polishing is conducted to remove excess conductive material above the hard mask layer.
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