发明名称 Manufacturing method of magneto-resistive effect type head
摘要 To present a manufacturing method of a magneto-resistive effect type head capable of manufacturing a magneto-resistive effect type head with stabilized head characteristics. A magneto-resistive effect type head is manufactured in a method comprising a step of forming a magneto-resistive effect film (30) in a trapezoidal shape (30A) having a specified abutting angle theta1 by means of ion milling through a resist mask of overhang structure, a step of forming bias magnet films (31) for filling in sides of the magneto-resistive effect film (30), and a step of forming an electrode film (33) to overlap partly with the magneto-resistive effect film (30) through the resist mask. The angle of the ion milling is 5° or less to the normal of the substrate surface. The angle of ion beam sputtering when forming the electrode film (33) is 30° or less to the normal of the substrate surface. At the step of for forming the trapezoidal shape (30A), the anti-ferromagnetic layer is etched to the position of 30% or less of its depth. A TiW film of 3 nm to 5 nm in thickness is used inn the base film (32) of the bias magnet film (31).
申请公布号 US6526649(B2) 申请公布日期 2003.03.04
申请号 US20010872105 申请日期 2001.06.01
申请人 SONY CORPORATION 发明人 OHKAWARA SHIGEHISA
分类号 G01R33/09;G11B5/31;G11B5/39;H01F10/32;H01F41/14;H01L43/08;H01L43/12;(IPC1-7):G11B5/127 主分类号 G01R33/09
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