| 摘要 |
PROBLEM TO BE SOLVED: To improved the dielectric strength of an MIM capacitor. SOLUTION: A lower electrode 2 is formed to a partial area of the upper surface of a substrate 1, a dielectric material film 3 is formed on the substrate 1 where the lower electrode 2 is formed, the dielectric material film 3 at the part opposing to the lower electrode 2 is removed by dry etching process as much as the predetermined thickness, and moreover an upper electrode 4 is formed on the dielectric material film 3 in opposition to the lower electrode 2. Accordingly, dielectric strength and uniformity of the MIM capacitor 2 can be improved by removing and repairing a defective part of the dielectric material film. Moreover, since the element portion other than the MIM capacitor in the semiconductor device is protected with a sufficiently thick dielectric material film, anti-environment performance can be improved.
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