| 摘要 |
<p>A radiolabeled implantable device includes a base, a first layer including Cu and a radioactive isotope on the base, and a second layer including Sn on the first layer. Preferably, the base is formed of stainless steel and the radioactive isotope is a radioisotope of Re, such as ?188Re or 186¿Re. Alternately, radioisotopes of the following elements may be used: Be, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Ge, As, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Cd, In, Sn, Sb, Te, Hf, Ta, W, Os, Ir, Pt, Au, Hg, TI, Pb, Bi, Po, At, Th, Pa, U, Np, Pu, Am, Cm, Bk, Cf, Es, Fm, Md, No, Lr. In addition, a process for producing a radiolabeled implantable device includes depositing a first layer including Cu and a radioactive isotope on a base, and depositing a second layer including Sn on the first layer. The process may further include removing Cr¿2?O3 from the base and/or rinsing the base prior to depositing the first layer thereon.</p> |
