| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a gallium nitride-based compound semiconductor having a good surface morphology nearly free of pits. SOLUTION: The gallium nitride-based compound semiconductor is obtained by growing at least a first gallium nitride-based compound semiconductor layer and a second gallium nitride-based compound semiconductor layer in this order on a substrate by using a hydride vapor phase growth method. At this time, the growth rate of the first gallium nitride-based compound semiconductor layer is adjusted to be lower than that of the second gallium nitride-based compound semiconductor layer.
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