| 摘要 |
PURPOSE: To provide a method for laser annealing, capable of obtaining a TFT having a high mobility on an overall surface of a substrate with a high yield, and to provide a laser-annealing condition deciding apparatus therefor. CONSTITUTION: An amorphous silicon film sample with a condition deciding laser beam under various energy density conditions to be subjected to irradiation by the laser-annealing condition deciding apparatus in advance prior to laser annealing, forms a plurality of polycrystalline silicon film samples having various grain sizes, introducing a light having a wavelength of a visible region as a center, to the polycrystalline silicon at a predetermined incident angle with respect to a perpendicular made erect on a flat surface of the silicon, detects its scattered light or the reflected light at an angle, except in the regularly reflecting direction of the incident light, thereby measures surface scattering degrees of the plurality of the samples, and obtains energy density conditions which correspond to the sample of the highest scattering strength. |
