MONOLITISCH GEHEUGEN.

摘要

This specification discloses a stored charged storage cell for implementation in monolithic memories. The storage cells are fabricated in an array form and are connected to accessing means for reading and writing information into and out of the array. An integrated circuit diffused common sensing line is connected to either selected rows or columns for reading and writing. These sensing lines are connected to a switchable current source. The cell itself clamps the output voltage swing and thus reduces power dissipation. The storage cells each comprise a pair of semiconductor elements for storing digital information on an associated parasitic capacitor. The pair of semiconductor devices are interconnected and operated in an AC mode so as to eliminate direct current paths and thus further prevent unnecessary power dissipation.