| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of forming a fine pattern in a semiconductor device, which enables the formation of a narrow pattern by preventing the deformation of a photoresist pattern for ArF. SOLUTION: The method of forming the fine pattern comprises a second step of forming to be etched layer 24 to be formed as the fine pattern and an antireflection layer 25 on a semiconductor substrate 20, and after applying a resist, forming a resist pattern 26 by performing photolithography for the photoresist film with an ArF exposure source; a third step of etching the antireflection film 25 and a portion of an area to be etched of the layer to be etched 24 at a first substrate temperature with a fluorine-based gas and an argon gas, by using the resist pattern 26 as an etching mask; a fourth step of etching a remaining portion of the region to be etched of the etch-target layer 24 at a second substrate temperature which is higher than the first substrate temperature with using a fluorine-based gas and an argon gas; and a fifth step of forming the fine pattern, by removing the resist pattern 26 or the like. |
