发明名称 |
METHOD FOR MANUFACTURING A SUBSTANTIALLY INTEGRAL MONOLITHIC APPARATUS INCLUDING A PLURALITY OF SEMICONDUCTOR MATERIALS |
摘要 |
A method for manufacturing a monolithic apparatus including a plurality of materials presenting a plurality of coplanar lands includes the steps of: (a) providing a substrate constructed of a first material and presenting a first land; (b) trenching the substrate to effect a cavity appropriately dimensioned to receive a semiconductor structure in an orientation presenting a second land generally coplanar with the first land; (c) depositing an accommodating layer constructed of a second material on the substrate and within the cavity to establish a workpiece; (d) depositing a composition layer constructed of a third material on the substrate; (e) selectively removing portions of the composition layer and the accommodating layer to establish the semiconductor structure; (f) depositing a cap layer constructed of a fourth material on the workpiece; and (g) removing the cap layer to establish a substantially planar face displaced from the plurality of lands by a predetermined distance.
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申请公布号 |
US2003036224(A1) |
申请公布日期 |
2003.02.20 |
申请号 |
US20010929021 |
申请日期 |
2001.08.15 |
申请人 |
MOTOROLA, INC. |
发明人 |
GORRELL JONATHAN F.;CORNETT KENNETH D. |
分类号 |
H01L21/20;H01L21/8258;H01L27/06;(IPC1-7):H01L21/00;H01L21/84;H01L21/338;H01L21/336 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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