| 摘要 |
PURPOSE: To prevent exfoliation of an interface of an etching stopper layer and an SiOF film which are used when a wiring trench for buried wiring is formed, in a semiconductor integrated circuit device wherein the buried wiring is formed in an interlayer insulating film containing the SiOF film by a damascene method. CONSTITUTION: A wiring trench 32 is formed by dry-etching the interlayer insulating film containing the SiOF films 26, 29. When Cu wiring 33 is embedded in the trench 32, an oxynitrided silicon film 27 is interposed between a silicon nitride film 28 for forming an etching stopper layer of the dry etching and the SiOF film 26, thereby trapping free F generated in the SiOF film 26 with the oxynitrided silicon film 27. |
