| 摘要 |
PROBLEM TO BE SOLVED: To solve the conventional problem that when forming contact holes passing through a insulation film in order to connect wirings which constitute a semiconductor integrated circuit, over-etching amount changes to penetrate the wirings and destabilize the property of electrical contact due to a variation in mask pattern dimension which occurs in a lithography process or the like. SOLUTION: When contact holes are formed relative to a plate electrode 11. a plurality of contact holes having different bore diameters 17, and 18 are formed. With this, the amount of over-etch for a contact hole having any of the bore diameters (a first contact hole 17) becomes suitable to the plate electrode 11, thereby making it possible to electrically stabilize the contact property. |
