发明名称 Semiconductor component and fabrication method
摘要 A thin lower electrode layer having an optimally protected capacitor dielectric is produced and structured. A conventional metallization layer for strip conductors is placed thereon as an upper electrode and structured. The capacitor dielectric can be deposited on a very even, preferably metallic surface (e.g. preferably TiN), sealed by a thin, preferably metallic layer (e.g. TiN) and protected so that is does not become thinned or damaged by other process steps.
申请公布号 US2003030094(A1) 申请公布日期 2003.02.13
申请号 US20020228241 申请日期 2002.08.26
申请人 LACHNER RUDOLF 发明人 LACHNER RUDOLF
分类号 H01L21/02;H01L21/768;(IPC1-7):H01L27/108 主分类号 H01L21/02
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