摘要 |
<p>A low-permittivity and high-heat-resistance organic polymer film applicable to the insulation layer of a semiconductor device, a production method therefor, and a semiconductor device using it. A polyparaxylylene film including a porous structure, obtained by the step of sublimating the cyclic dimer of paraxylylene or its derivative, the step of pyrolyzing the obtained sublimate at 800-950°C, and the step of polymerizing the obtained pyrolysate; a production method therefor; and a semiconductor device.</p> |