发明名称 POLYPARAXYLYLENE FILM, PRODUCTION METHOD THEREFOR AND SEMICONDUCTOR DEVICE
摘要 <p>A low-permittivity and high-heat-resistance organic polymer film applicable to the insulation layer of a semiconductor device, a production method therefor, and a semiconductor device using it. A polyparaxylylene film including a porous structure, obtained by the step of sublimating the cyclic dimer of paraxylylene or its derivative, the step of pyrolyzing the obtained sublimate at 800-950°C, and the step of polymerizing the obtained pyrolysate; a production method therefor; and a semiconductor device.</p>
申请公布号 WO2003011952(P1) 申请公布日期 2003.02.13
申请号 JP2002007389 申请日期 2002.07.22
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