| 发明名称 |
Method for manufacturing semiconductor device |
| 摘要 |
According to a method for manufacturing a semiconductor device having a junction boundary where SiGe of a first conductivity type and Si or SiGe of a second conductivity type come in contact with each other, a portion where the junction boundary is exposed on the surface is cleaned with a first solution containing hydrofluoric acid and is then cleaned with a second solution containing sulfuric acid.
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| 申请公布号 |
US6518197(B2) |
申请公布日期 |
2003.02.11 |
| 申请号 |
US20010951433 |
申请日期 |
2001.09.14 |
| 申请人 |
MITSUBISHI HEAVY INDUSTRIES, LTD. |
发明人 |
HIROSE FUMIHIKO |
| 分类号 |
H01L21/308;H01L21/304;H01L21/306;H01L21/329;H01L21/8222;H01L29/165;H01L29/861;(IPC1-7):H01L21/461 |
主分类号 |
H01L21/308 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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