发明名称 |
Method of reducing plasma charge damage for plasma processes |
摘要 |
A method is provided for depositing a thin film on a substrate in a process chamber with reduced incidence of plasma charge damage. A process gas containing a precursor gases suitable for forming a plasma is flowed into a process chamber, and a plasma is generated from the process gas to deposit the thin film on the substrate. The precursor gases are flowed into the process chamber such that the thin film is deposited at the center of the substrate more rapidly than at an edge of the substrate.
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申请公布号 |
US2003024901(A1) |
申请公布日期 |
2003.02.06 |
申请号 |
US20010771203 |
申请日期 |
2001.01.26 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
ISHIKAWA TETSUYA;DEMOS ALEXANDROS T.;CHO SEON-MEE;GAO FENG;NIAZI KAVEH F.;ARUGA MICHIO |
分类号 |
C23C16/52;C23C16/455;H01L21/205;H01L21/302;H01L21/31;(IPC1-7):C23F1/00;C23C16/00 |
主分类号 |
C23C16/52 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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