METHOD OF DEPOSITING ALUMINIUM NITRIDE

摘要

A method of depositing crystallographically orientated aluminium nitride. Aluminium nitride is sputter deposited from a target on a workpiece maintained on a biased platen. The sputter gas is or includes krypton or xenon. The bias to the platen is selected to give a substantially flat XRD FWHM profile across the wafer and a stress in the film of less than or equal to +/- 5E10-8 dynes per cm<2>.