NONVOLATILE SEMICONDUCTOR MEMORY DEVICE

摘要

PURPOSE: To provide a reliable nonvolatile semiconductor memory device. CONSTITUTION: The nonvolatile semiconductor memory device comprises a capacitor 250. The capacitor comprises a lower electrode 203, a second dielectric layer 204, and an upper electrode 205 having a part formed on the lower electrode 203 through the second dielectric layer 204. The upper electrode 205 comprises a first top face 241t positioned in a part relatively far from a silicon wafer 1, and a second top face 242t positioned in a part relatively close to the silicon wafer 1. The second dielectric layer 204 has a structure laminating a first silicon oxide film 104a, a silicon nitride film 104b, and a second silicon oxide film 104c in this order.