Semiconductor device manufacturing method of forming an etching stopper film on a diffusion prevention film at a higher temperature

摘要

A method of manufacturing a semiconductor device is provided. The method comprises the steps of forming an insulating interlayer film on a substrate, forming a Cu interconnection pattern in the insulating interlayer film, forming a first insulating film on the insulating interlayer film at a first temperature lower than 400° C. in a nonoxide situation so that the first insulating film covers the Cu interconnection pattern, and forming a second insulating film on the first insulating film at a second temperature higher than the first temperature.