| 摘要 |
A dynamic random access memory includes first and second address generators, subarrays, an address decode path and a precharge activation path, wherein the precharge activation path and the address decode path are matched. The first address generator identifies a word and a column address. The second address generator identifies a subarray address. The subarrays include a number of cells for storing data. The address decode is configured to transmit address and other information while the precharge activation path is configured to transmit a precharge activation signal. In a preferred embodiment, an event during an active phase process, such as a sense amplifier set signal initiation, initiates the precharge phase process.
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