发明名称 Method and structure for limiting emission current in field emission devices
摘要 A field emission display has electron emitters that are current-limited by implanting in a silicon layer only enough ions to produce a desired current, and then forming emitters from the silicon layer by isotropic etching.
申请公布号 US6509578(B1) 申请公布日期 2003.01.21
申请号 US20000679834 申请日期 2000.10.05
申请人 MICRON TECHNOLOGY, INC. 发明人 ZIMLICH DAVID
分类号 H01J1/304;H01J9/02;(IPC1-7):H01L21/266 主分类号 H01J1/304
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