| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a field emission type electron emitting element capable of performing an efficient electron emission at a low voltage and being manufactured by an easy process, and having a large electron emitting area, an electron source and an image forming device. SOLUTION: An electron emission layer formed of an electron emitting material located within the opening of an insulating layer and arranged on a cathode electrode is formed so that the band gap of an electron injection part to come into contact with the cathode in the electron emission layer smaller than the band gap of the electron emission part on the opening side of the insulating layer in the electron emission layer, and the change rate dE/dW of the band gap of the electron emission material having a thickness directional distance W from the cathode electrode within the electron emission layer is not the maximum in the electron injection part.</p> |
