发明名称 NITRIDE-BASED SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a manufacturing method of a laser beam resonator having high reproducibility and yields by forming a separation groove where flatness on a section is excellent on an AlGaInN-based crystal substrate. SOLUTION: In an AlGaInN-based laser wafer manufactured on a sapphire substrate, the substrate is irradiated with a pulse laser beam from the back side, and then is applied to an AlGaInN-based crystal section other than the laser resonator section of a surface for forming a separation groove. After that, force is applied along the separation groove for separating the substrate to a laser bar. In this manner, the surface of the resonator where flatness is extremely high and a reflection loss rarely exists is achieved, thus achieving manufacture with high reproducibility and yields.
申请公布号 JP2003017790(A) 申请公布日期 2003.01.17
申请号 JP20010201628 申请日期 2001.07.03
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 ISHIBASHI AKIHIKO;KAWAGUCHI YASUTOSHI;OTSUKA NOBUYUKI
分类号 B23K26/00;B23K101/40;H01L33/32;H01S5/02;H01S5/323 主分类号 B23K26/00
代理机构 代理人
主权项
地址
您可能感兴趣的专利