METHOD OF FORMING SILICON FILM, THE SILICON FILM, AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a silicon film which is superior in characteristics and is formed at a high speed, a semiconductor device containing the same, and furthermore a semiconductor device which uses the same, is superior in adhesion and environmental resistance, and has a short tact time in manufacture. SOLUTION: In this method of forming a silicon film on a substrate, the substrate is given a temperature gradient in the thickness direction, when a silicon film is formed on its surface, and the temperature of the surface of the substrate, where a silicon film is formed, is set higher than that of its other surface, or the direction of the temperature gradient is reversed.