| 摘要 |
PROBLEM TO BE SOLVED: To suppress propagation delays by realizing transfer electrodes having low resistance and low capacitance without deteriorating the charge transfer efficiencies of the electrodes. SOLUTION: Light receiving sections and charge transfer sections are provided in the Si substrate 110 of a solid-state image pickup element, and the transfer electrodes 114 made of polycrystalline Si, etc., are provided on the substrate 110 through insulating films 112 made of SiO2 , etc. The electrodes 114 formed in such a pattern as to avoid the light receiving sections, and the electrodes 114 are arranged closely to each other in portions along the charge transfer sections of vertical transfer registers. The edge sections 114A of the transfer electrodes 114 are formed so that their thicknesses may become thinner in steps toward the outside. Consequently, though the edge sections 114A of the electrodes 114 are arranged closely to each other in the adjacent portions of the electrodes 114, the edge sections 114A have small facing areas as compared with the conventional example, and the capacitance generated in the adjacent portions are suppressed.
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