| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a non-volatile semiconductor memory in which detect of data retention can be reduced sufficiently. SOLUTION: This device has non-volatile memory cells, a verifying circuit 14 reading data stored in the non-volatile memory cell using read-voltage and discriminating whether read is '0' or not, a write circuit 15 writing '0' data in a non-volatile memory cell, and a control circuit 13 receiving a determined result from the verifying circuit 14, making the rite circuit 15 perform write when read data are '0', and making the write circuit 15 stop write when read data are '1'.</p> |
