| 摘要 |
PURPOSE: A fabrication method of a capacitor in semiconductor devices is provided to improve capacitance by forming a lower electrode having a rugged shape using etching selectivity between an oxide and nitride layer. CONSTITUTION: An interlayer dielectric(12) having a contact plug(13) is formed on a silicon substrate(11). After forming an etch stop layer(14) on the resultant structure, at least one oxide and nitride layer are alternately formed on the etch stop layer(14). A rugged hole is formed to expose the contact plug(13) by dry-etching of the oxide and nitride layer and the interlayer dielectric(12) and wet-etching of the exposed oxide and nitride layer. A rugged lower electrode(19a) is then formed at inner walls of the rugged hole. An HSG(Hemi Spherical Grain)(21) is grown on the rugged lower electrode(19a). A dielectric film(22) and an upper electrode are sequentially formed on the resultant structure.
|
