| 摘要 |
On a first region (R1) of a surface (101S1) of an n-type silicon carbide layer (101), a Schottky drain electrode (102) is formed. Further, on a second region (R2), an ohmic source electrode (103) is formed. Furthermore, on a third region (R3), a Schottky gate electrode (104) is formed. Such a structure achieves a state where a Schottky barrier diode is formed between these electrodes (102 and 103). That can achieve a switching element using the silicon carbide layer with high breakdown voltage and low loss, which has both a switching function and a diode function (voltage blocking capability of reverse direction), with no pn junction formed in the silicon carbide layer, and thereby ensures reduction in size an weight of modules.
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