发明名称 CONFIGURABLE PLASMA VOLUME ETCH CHAMBER
摘要 <p>A plasma processing chamber (200) is provided. The plasma processing chamber includes a bottom electrode (144) configured to support a substrate (146) and a top electrode (142) located over the bottom electrode. The plasma processing chamber further includes a plasma confinement assembly (173) designed to transition between a closed orientation and an open orientation. In the closed orientation, the plasma confinement assembly defines a first volume (145) for plasma during processing, and in the open orientation, the plasma confinement assembly defines a second volume during processing which is larger than the first volume.</p>
申请公布号 WO2003003403(A1) 申请公布日期 2003.01.09
申请号 US2002019695 申请日期 2002.06.21
申请人 发明人
分类号 主分类号
代理机构 代理人
主权项
地址
您可能感兴趣的专利